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Mechanism of Silicon Carbide Film Deposition at Room Temperature Using Monomethylsilane Gas
Habuka, Hitoshi, Ando, YusukeVolume:
158
Year:
2011
Language:
english
Journal:
Journal of The Electrochemical Society
DOI:
10.1149/1.3545071
File:
PDF, 2.29 MB
english, 2011