[IEEE 2006 International Electron Devices Meeting - San Francisco, CA, USA (2006.12.11-2006.12.13)] 2006 International Electron Devices Meeting - Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width
Andrieu, F., Faynot, O., Garros, X., Lafond, D., Buj-Dufournet, C., Tosti, L., Minoret, S., Vidal, V., Barbe, J.C., Allain, F., Rouchouze, E., Vandroux, L., Cosnier, V., Casse, M., Delaye, V., CarabasYear:
2006
Language:
english
DOI:
10.1109/IEDM.2006.346865
File:
PDF, 1.01 MB
english, 2006