The effect of GaN thickness inserted between two AlN layers on the transport properties of a lattice matched AlInN/AlN/GaN/AlN/GaN double channel heterostructure
Tülek, R., Arslan, E., Bayraklı, A., Turhan, S., Gökden, S., Duygulu, Ö., Kaya, A.A., Fırat, T., Teke, A., Özbay, E.Volume:
551
Language:
english
Journal:
Thin Solid Films
DOI:
10.1016/j.tsf.2013.11.114
Date:
January, 2014
File:
PDF, 1.44 MB
english, 2014