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Realizing a family of transition-metal-oxide memristors based on volatile resistive switching at a rectifying metal/oxide interface
Yang, M, Qin, N, Ren, L Z, Wang, Y J, Yang, K G, Yu, F M, Zhou, W Q, Meng, M, Wu, S X, Bao, D H, Li, S WVolume:
47
Language:
english
Journal:
Journal of Physics D: Applied Physics
DOI:
10.1088/0022-3727/47/4/045108
Date:
January, 2014
File:
PDF, 543 KB
english, 2014