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High stability of amorphous hafnium–zinc–tin oxide thin film transistors
Kim, Woong-Sun, Shin, Sae-Young, Lee, Sang-Ho, Han, Dong-Suk, Park, Jong-WanVolume:
12
Language:
english
Journal:
Current Applied Physics
DOI:
10.1016/j.cap.2012.05.042
Date:
December, 2012
File:
PDF, 671 KB
english, 2012