A Novel Growth Method of Freestanding GaN Using In situ...

Applied Physics Express 2013 / 12 Vol. 6; Iss. 12

A Novel Growth Method of Freestanding GaN Using In situ Removal of Si Substrate in Hydride Vapor Phase Epitaxy

Lee, Moonsang, Mikulik, Dmitry, Kim, Joosung, Tak, Youngjo, Kim, Junyoun, Shim, Munbo, Park, Youngsoo, Chung, Uin, Yoon, Euijoon, Park, Sungsoo
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Volume:
6
Language:
english
Journal:
Applied Physics Express
DOI:
10.7567/APEX.6.125502
Date:
December, 2013
File:
PDF, 1.73 MB
english, 2013
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