Enhanced performance of an AlGaN/GaN high electron mobility...

Semiconductor Science and Technology 2013 / 07 Vol. 28; Iss. 7

Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy

Shahedipour-Sandvik, F, Leathersich, J, Tompkins, R P, Suvarna, P, Tungare, M, Walsh, T A, Kirchner, K W, Zhou, S, Jones, K A
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/7/074002
Date:
July, 2013
File:
PDF, 1.04 MB
english, 2013
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