Ion-induced changes in semiconductor properties of...

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 2013 / 11 Vol. 314

Ion-induced changes in semiconductor properties of hydrogenated amorphous silicon

Sato, Shin-ichiro, Ohshima, Takeshi
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Volume:
314
Language:
english
Journal:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
DOI:
10.1016/j.nimb.2013.05.042
Date:
November, 2013
File:
PDF, 1022 KB
english, 2013
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