Influence of Ga/N ratio on morphology, vacancies, and...

Influence of Ga/N ratio on morphology, vacancies, and electrical transport in GaN grown by molecular beam epitaxy at high temperature

Koblmüller, G., Reurings, F., Tuomisto, F., Speck, J. S.
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Volume:
97
Year:
2010
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.3514236
File:
PDF, 639 KB
english, 2010
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