Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well...

Semiconductor Science and Technology 2013 / 01 Vol. 28; Iss. 1

Recombination channels in 2.4–3.2 µm GaInAsSb quantum-well lasers

Gadedjisso-Tossou, K S, Belahsene, S, Mohou, M A, Tournié, E, Rouillard, Y
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Volume:
28
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/28/1/015015
Date:
January, 2013
File:
PDF, 365 KB
english, 2013
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