Silicon etching mechanism and anisotropy in CF4+O2 plasma

Silicon etching mechanism and anisotropy in CF4+O2 plasma

Lee, Young H., Chen, Mao-Min
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Volume:
54
Year:
1983
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.331774
File:
PDF, 752 KB
english, 1983
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