Nucleation and growth of GaN nanorods on Si (111) surfaces by plasma-assisted molecular beam epitaxy - The influence of Si- and Mg-doping
Furtmayr, Florian, Vielemeyer, Martin, Stutzmann, Martin, Arbiol, Jordi, EstradeÌ, SoÌnia, PeiroÌ, Francesca, Morante, Joan Ramon, Eickhoff, MartinVolume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.2953087
File:
PDF, 1.07 MB
english, 2008