Selective MOVPE of InGaN-based LED structures on non-planar Si (111) facets of patterned Si (100) substrates
Reuters, B., Strate, J., Hahn, H., Finken, M., Wille, A., Heuken, M., Kalisch, H., Vescan, A.Volume:
391
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.01.002
Date:
April, 2014
File:
PDF, 2.79 MB
english, 2014