Electronic structure of the Si/GaP(110) interface

Electronic structure of the Si/GaP(110) interface

Niles, David W., Höchst, Hartmut
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Volume:
39
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.39.7769
Date:
April, 1989
File:
PDF, 382 KB
english, 1989
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