Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET...

IEEE Transactions on Device and Materials Reliability 2010 / 06 Vol. 10; Iss. 2

Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model

Rao, Rathnamala, DasGupta, Nandita, DasGupta, Amitava
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
10
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2010.2044180
Date:
June, 2010
File:
PDF, 255 KB
english, 2010
Conversion to is in progress
Conversion to is failed