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Study of Random Dopant Fluctuation Effects in FD-SOI MOSFET Using Analytical Threshold Voltage Model
Rao, Rathnamala, DasGupta, Nandita, DasGupta, AmitavaVolume:
10
Language:
english
Journal:
IEEE Transactions on Device and Materials Reliability
DOI:
10.1109/TDMR.2010.2044180
Date:
June, 2010
File:
PDF, 255 KB
english, 2010