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Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry
Carbonetto, Sebastián H., Garcia Inza, Mariano A., Lipovetzky, José, Redin, Eduardo G., Sambuco Salomone, Lucas, Faigon, AdriánVolume:
58
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2011.2170430
Date:
December, 2011
File:
PDF, 179 KB
english, 2011