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High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate
Zhang, Jianli, Xiong, Chuanbing, Liu, Junlin, Quan, Zhijue, Wang, Li, Jiang, FengyiVolume:
114
Language:
english
Journal:
Applied Physics A
DOI:
10.1007/s00339-014-8283-9
Date:
March, 2014
File:
PDF, 1.89 MB
english, 2014