Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE
Mukhopadhyay, Partha, Bag, Ankush, Gomes, Umesh, Banerjee, Utsav, Ghosh, Saptarsi, Kabi, Sanjib, Chang, Edward Y. I., Dabiran, Amir, Chow, Peter, Biswas, DhrubesVolume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-014-3050-4
Date:
April, 2014
File:
PDF, 1.53 MB
english, 2014