Effect of ion doping on the dislocation-related...

Semiconductors 2014 / 02 Vol. 48; Iss. 2

Effect of ion doping on the dislocation-related photoluminescence in Si+-implanted silicon

Mikhaylov, A. N., Belov, A. I., Korolev, D. S., Timofeeva, A. O., Vasiliev, V. K., Shushunov, A. N., Bobrov, A. I., Pavlov, D. A., Tetelbaum, D. I., Shek, E. I.
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Volume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782614020183
Date:
February, 2014
File:
PDF, 482 KB
english, 2014
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