GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates
Tompkins, R. P., Smith, J. R., Kirchner, K. W., Jones, K. A., Leach, J. H., Udwary, K., Preble, E., Suvarna, P., Leathersich, J.M., Shahedipour-Sandvik, F.Volume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-014-3021-9
Date:
April, 2014
File:
PDF, 539 KB
english, 2014