Oxygen-vacancy defects in electron-irradiated Si: the role of carbon in their behavior
Londos, C. A., Sgourou, E. N., Chroneos, A.Volume:
25
Language:
english
Journal:
Journal of Materials Science: Materials in Electronics
DOI:
10.1007/s10854-013-1664-6
Date:
February, 2014
File:
PDF, 484 KB
english, 2014