Microwave Annealing of High Dose Al+-implanted 4H-SiC:...

Journal of Electronic Materials 2014 / 04 Vol. 43; Iss. 4

Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication

Nath, A., Rao, Mulpuri V., Tian, Y. -L., Parisini, A., Nipoti, R.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-013-2973-5
Date:
April, 2014
File:
PDF, 465 KB
english, 2014
Conversion to is in progress
Conversion to is failed