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Microwave Annealing of High Dose Al+-implanted 4H-SiC: Towards Device Fabrication
Nath, A., Rao, Mulpuri V., Tian, Y. -L., Parisini, A., Nipoti, R.Volume:
43
Language:
english
Journal:
Journal of Electronic Materials
DOI:
10.1007/s11664-013-2973-5
Date:
April, 2014
File:
PDF, 465 KB
english, 2014