Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N...

Crystallography Reports 2013 / 12 Vol. 58; Iss. 7

Defects and stresses in MBE-grown GaN and Al0.3Ga0.7N layers doped by silicon using silane

Ratnikov, V. V., Kyutt, R. N., Smirnov, A. N., Davydov, V. Yu., Shcheglov, M. P., Malin, T. V., Zhuravlev, K. S.
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Volume:
58
Language:
english
Journal:
Crystallography Reports
DOI:
10.1134/S106377451307016X
Date:
December, 2013
File:
PDF, 214 KB
english, 2013
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