Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method
Torrente, Giulio, Castellani, Niccolò, Ghetti, Andrea, Monzio Compagnoni, Christian, Lacaita, Andrea L., Spinelli, Alessandro S., Benvenuti, AugustoVolume:
12
Language:
english
Journal:
Journal of Computational Electronics
DOI:
10.1007/s10825-013-0530-3
Date:
December, 2013
File:
PDF, 1.83 MB
english, 2013