![](/img/cover-not-exists.png)
Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk
Vasilév, Yu. B., Verezub, N. A., Mezhennyi, M. V., Prosolovich, V. S., Prostomolotov, A. I., Reznik, V. Ya.Volume:
42
Language:
english
Journal:
Russian Microelectronics
DOI:
10.1134/S1063739713080155
Date:
December, 2013
File:
PDF, 1.80 MB
english, 2013