Antimony segregation in stressed SiGe heterostructures...

Semiconductors 2013 / 11 Vol. 47; Iss. 11

Antimony segregation in stressed SiGe heterostructures grown by molecular beam epitaxy

Drozdov, M. N., Novikov, A. V., Yurasov, D. V.
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Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613110079
Date:
November, 2013
File:
PDF, 161 KB
english, 2013
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