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Spectral-kinetic properties of heterostructures with GaAsSb/InGaAs/GaAs-based quantum wells emitting in the range of 1.0–1.2 μm
Morozov, S. V., Kryzhkov, D. I., Aleshkin, V. Ya., Zvonkov, B. N., Vikhrova, O. I.Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613110158
Date:
November, 2013
File:
PDF, 254 KB
english, 2013