Influence of temperature on the mechanism of carrier injection in light-emitting diodes based on InGaN/GaN multiple quantum wells
Prudaev, I. A., Golygin, I. Yu., Shirapov, S. B., Romanov, I. S., Khludkov, S. S., Tolbanov, O. P.Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613100230
Date:
October, 2013
File:
PDF, 268 KB
english, 2013