Single-well resonant-tunneling diode heterostructures based...

Bulletin of the Lebedev Physics Institute 2013 / 08 Vol. 40; Iss. 8

Single-well resonant-tunneling diode heterostructures based on In0.53Ga0.47As/AlAs/InP with the peak-to-valley current ratio of 22:1 at room temperature

Syzranov, V. S., Klimenko, O. A., Ermolov, A. S., Kazakov, I. P., Shmelev, S. S., Egorkin, V. I., Murzin, V. N.
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Volume:
40
Language:
english
Journal:
Bulletin of the Lebedev Physics Institute
DOI:
10.3103/S106833561308006X
Date:
August, 2013
File:
PDF, 753 KB
english, 2013
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