Physically based analytical model for plateau in gate C-V...

Journal of Central South University 2013 / 09 Vol. 20; Iss. 9

Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFET

Wang, Bin, Zhang, He-ming, Hu, Hui-yong, Zhang, Yu-ming, Zhou, Chun-yu, Li, Yu-chen
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Volume:
20
Language:
english
Journal:
Journal of Central South University
DOI:
10.1007/s11771-013-1745-y
Date:
September, 2013
File:
PDF, 543 KB
english, 2013
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