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Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier
Nevedomskiy, V. N., Bert, N. A., Chaldyshev, V. V., Preobrazhenskiy, V. V., Putyato, M. A., Semyagin, B. R.Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613090170
Date:
September, 2013
File:
PDF, 1.43 MB
english, 2013