Formation mechanism of contact resistance to III–N...

Semiconductors 2013 / 09 Vol. 47; Iss. 9

Formation mechanism of contact resistance to III–N heterostructures with a high dislocation density

Sachenko, A. V., Belyaev, A. E., Boltovets, N. S., Zhilyaev, Yu. V., Kapitanchuk, L. M., Klad’ko, V. P., Konakova, R. V., Kudryk, Ya. Ya., Naumov, A. V., Panteleev, V. N., Sheremet, V. N.
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Volume:
47
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782613090212
Date:
September, 2013
File:
PDF, 236 KB
english, 2013
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