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[IEEE 2006 IEEE international SOI - Niagara Falls, NY, USA (2006.10.2-2006.10.5)] 2006 IEEE international SOI Conferencee Proceedings - Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics
Kang, C., Choi, R., Song, S., Ju, B., Hussain, M., Lee, B., Yang, J-w., Zeitzoff, P., Pham, D., Xiong, W., Tseng, H-hYear:
2006
Language:
english
DOI:
10.1109/SOI.2006.284472
File:
PDF, 2.39 MB
english, 2006