Raman study of free-standing porous silicon

Physical Review B 1996 / 1 Vol. 53; Iss. 4

Raman study of free-standing porous silicon

Tanino, H., Kuprin, A., Deai, H., Koshida, N.
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Volume:
53
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.53.1937
Date:
January, 1996
File:
PDF, 186 KB
english, 1996
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