Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
Shamakhov, V. V., Nikolaev, D. N., Lyutetskiy, A. V., Bakhvalov, K. V., Rastegaeva, M. G., Slipchenko, S. O., Pikhtin, N. A., Tarasov, I. S.Volume:
48
Language:
english
Journal:
Semiconductors
DOI:
10.1134/S1063782614030233
Date:
March, 2014
File:
PDF, 142 KB
english, 2014