Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy
Wagner, V., Parillaud, O., Bühlmann, H. J., Ilegems, M., Gradecak, S., Stadelmann, P., Riemann, T., Christen, J.Volume:
92
Year:
2002
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1489711
File:
PDF, 1.14 MB
english, 2002