Single-Event Transient Modeling in a 65-nm Bulk CMOS...

IEEE Transactions on Nuclear Science 2013 / 12 Vol. 60; Iss. 6

Single-Event Transient Modeling in a 65-nm Bulk CMOS Technology Based on Multi-Physical Approach and Electrical Simulations

Hubert, Guillaume, Artola, Laurent
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Volume:
60
Language:
english
Journal:
IEEE Transactions on Nuclear Science
DOI:
10.1109/TNS.2013.2287299
Date:
December, 2013
File:
PDF, 1.52 MB
english, 2013
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