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Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$...

IEEE Electron Device Letters 2011 / 03 Vol. 32; Iss. 3

Good Endurance and Memory Window for $ \hbox{Ti/HfO}_{x}$ Pillar RRAM at 50-nm Scale by Optimal Encapsulation Layer

Chen, Yu-Sheng, Lee, Heng-Yuan, Chen, Pang-Shiu, Gu, Pei-Yi, Liu, Wen-Hsing, Chen, Wei-Su, Hsu, Yen-Ya, Tsai, Chen-Han, Chen, Frederick, Tsai, Ming-Jinn, Lien, Chenhsin
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Volume:
32
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2010.2099201
Date:
March, 2011
File:
PDF, 400 KB
english, 2011
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