Structural advantage for the EOT scaling and improved...

IEEE Electron Device Letters 2006 / 08 Vol. 27; Iss. 8

Structural advantage for the EOT scaling and improved electron channel mobility by incorporating dysprosium oxide (Dy/sub 2/O/sub 3/) into HfO/sub 2/ n-MOSFETs

Tackhwi Lee,, Se Jong Rhee,, Chang Yong Kang,, Feng Zhu,, Hyoung-sub Kim,, Changhwan Choi,, Ok, I., Manhong Zhang,, Krishnan, S., Thareja, G., Lee, J.C.
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Volume:
27
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2006.879023
Date:
August, 2006
File:
PDF, 188 KB
english, 2006
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