[IEEE 2008 IEEE International Electron Devices Meeting...

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[IEEE 2008 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2008.12.15-2008.12.17)] 2008 IEEE International Electron Devices Meeting - A 32nm logic technology featuring 2nd-generation high-k + metal-gate transistors, enhanced channel strain and 0.171μm2 SRAM cell size in a 291Mb array

Natarajan, S., Armstrong, M., Bost, M., Brain, R., Brazier, M., Chang, C.-H., Chikarmane, V., Childs, M., Deshpande, H., Dev, K., Ding, G., Ghani, T., Golonzka, O., Han, W., He, J., Heussner, R., Jame
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Year:
2008
Language:
english
DOI:
10.1109/IEDM.2008.4796777
File:
PDF, 503 KB
english, 2008
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