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Ab initio calculation of band edges modified by (001) biaxial strain in group IIIA–VA and group IIB–VIA semiconductors: Application to quasiparticle energy levels of strained InAs/InP quantum dot
E. S. Kadantsev, M. Zielinski, M. Korkusinski, P. HawrylakVolume:
107
Year:
2010
Language:
english
DOI:
10.1063/1.3406144
File:
PDF, 754 KB
english, 2010