Electrical properties of Y[sub 2]O[sub 3] high-κ gate...

Journal of Applied Physics 2003 Vol. 93; Iss. 7

Electrical properties of Y[sub 2]O[sub 3] high-κ gate dielectric on Si(001): The influence of postmetallization annealing

Ioannou-Sougleridis, V., Vellianitis, G., Dimoulas, A.
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Volume:
93
Year:
2003
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.1558965
File:
PDF, 423 KB
english, 2003
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