Effect of Temperature and Electric Field on Degradation in Amorphous InGaZnO TFTs Under Positive Gate and Drain Bias Stress
Kim, Jong In, Cho, In-Tak, Joe, Sung-Min, Jeong, Chan-Yong, Lee, Daeun, Kwon, Hyuck-In, Jin, Sung Hun, Lee, Jong-HoVolume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2014.2306818
Date:
April, 2014
File:
PDF, 681 KB
english, 2014