Analysis of self-lift-off process during HVPE growth of GaN...

Journal of Crystal Growth 2013 / 10 Vol. 380

Analysis of self-lift-off process during HVPE growth of GaN on MOCVD-GaN/sapphire substrates with photolitographically patterned Ti mask

Amilusik, M., Sochacki, T., Łucznik, B., Boćkowski, M., Sadovyi, B., Presz, A., Dzięcielewski, I., Grzegory, I.
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Volume:
380
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2013.06.005
Date:
October, 2013
File:
PDF, 7.66 MB
english, 2013
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