Dependence of Light-Accelerated Instability on Bias and...

ECS Journal of Solid State Science and Technology 2013 / 02 Vol. 2; Iss. 4

Dependence of Light-Accelerated Instability on Bias and Environment in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors

Chen, Y.-C., Chang, T.-C., Li, H.-W., Chung, W.-F., Hsieh, T.-Y., Chen, Y.-H., Tsai, W.-W., Chiang, W.-J., Yan, J.-Y.
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Volume:
2
Language:
english
Journal:
ECS Journal of Solid State Science and Technology
DOI:
10.1149/2.028304jss
Date:
February, 2013
File:
PDF, 1.04 MB
english, 2013
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