Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Kudrawiec, R., Paszkiewicz, B., Motyka, M., Misiewicz, J., Derluyn, J., Lorenz, A., Cheng, K., Das, J., Germain, M.Volume:
104
Year:
2008
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.3009956
File:
PDF, 385 KB
english, 2008