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The effect of silicon doping in the barrier on the electroluminescence of InGaN/GaN multiple quantum well light emitting diodes
Wu, Xiaoming, Liu, Junlin, Xiong, Chuanbing, Zhang, Jianli, Quan, Zhijue, Mao, Qinghua, Jiang, FengyiVolume:
114
Year:
2013
Language:
english
Journal:
Journal of Applied Physics
DOI:
10.1063/1.4820450
File:
PDF, 1.90 MB
english, 2013