Impact of Quantization Energy and Gate Leakage in Bilayer...

IEEE Electron Device Letters 2013 / 02 Vol. 34; Iss. 2

Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors

Teherani, James T., Agarwal, Sapan, Yablonovitch, Eli, Hoyt, Judy L., Antoniadis, Dimitri A.
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2229458
Date:
February, 2013
File:
PDF, 339 KB
english, 2013
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