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Impact of Quantization Energy and Gate Leakage in Bilayer Tunneling Transistors
Teherani, James T., Agarwal, Sapan, Yablonovitch, Eli, Hoyt, Judy L., Antoniadis, Dimitri A.Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/led.2012.2229458
Date:
February, 2013
File:
PDF, 339 KB
english, 2013