InAs hole inversion and bandgap interface state density of...

Applied Physics Letters 2013 Vol. 103; Iss. 14

InAs hole inversion and bandgap interface state density of 2 × 1011 cm−2 eV−1 at HfO2/InAs interfaces

Wang, C. H., Wang, S. W., Doornbos, G., Astromskas, G., Bhuwalka, K., Contreras-Guerrero, R., Edirisooriya, M., Rojas-Ramirez, J. S., Vellianitis, G., Oxland, R., Holland, M. C., Hsieh, C. H., Ramvall
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Volume:
103
Year:
2013
Language:
english
Journal:
Applied Physics Letters
DOI:
10.1063/1.4820477
File:
PDF, 1.69 MB
english, 2013
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