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[IEEE 2005 International Semiconductor Device Research Symposium - Bethesda, Maryland, USA (Dec. 7-9, 2005)] 2005 International Semiconductor Device Research Symposium - New Dielectrics for Gate Oxides and Surface Passivation on GaN
Gila, B.P., Thaler, G.T., Onstine, A.H., Hlad, M., Gerger, A., Herrero, A., Allums, K.K., Stodilka, D., Jang, S., Kang, B., Anderson, T., Abernathy, C.R., Ren, F., Pearton, S.J.Year:
2005
Language:
english
DOI:
10.1109/isdrs.2005.1596014
File:
PDF, 144 KB
english, 2005